Результаты поиска BSV52

Найдено 32 результатов.

• BSV52LT1G
  ON Semiconductor — Transistors Bipolar- RF 100mA 12V Switching NPN
• BSV52_D87Z
  Fairchild Semiconductor — TRANSISTOR NPN 12V 200MA SOT-23
• BSV52LT1G
  ON Semiconductor — TRANS NPN 12V 100MA SOT-23
• BSV52LT1G
  ON Semiconductor — TRANS NPN 12V 100MA SOT-23
• BSV52LT1-D
  ON Semiconductor — Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
• BSV52FILM
  STMicroelectronics — STMicroelectronics BSV52FILM Mfr Package Description: MINIATURE, PLASTIC PACKAGE-3 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 12 ns Turn-off Time-Max (toff): 18 ns DC Current Gain-Min (hFE): 25 Collector-emitter Voltage-Max: 12 V Transition Frequency-Nom (fT): 400 MHz
• BSV52LT1D
  ON Semiconductor —
• BSV52,215
  NXP Semiconductors — NXP Semiconductors BSV52,215 Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 25 Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 500MHz ID_COMPONENTS: 1949728 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 500 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 12V Other Names: 933099000215, BSV52 T/R
• BSV52 T/R
  NXP Semiconductors — NXP Semiconductors BSV52 T/R Collector- Base Voltage Vcbo: 20 V Collector- Emitter Voltage Vceo Max: 12 V Collector-emitter Saturation Voltage: 5 V Continuous Collector Current: 0.1 A Dc Collector/base Gain Hfe Min: 25 Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 3000 Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: BSV52,215 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• BSV52D87Z
  Fairchild Semiconductor — Fairchild Semiconductor BSV52D87Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 12 ns Turn-off Time-Max (toff): 18 ns DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 0.2000 A Collector-emitter Voltage-Max: 12 V Transition Frequency-Nom (fT): 400 MHz