Результаты поиска BCP52

Найдено 49 результатов.

• BCP52TRL
  NXP Semiconductors — NXP Semiconductors BCP52TRL Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: PNP Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 40 Collector Current-Max (IC): 1 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 50 MHz
• BCP52,135
  Philips Semiconductors — Philips Semiconductors BCP52,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 1.5 A Gain Bandwidth Product fT: 145 MHz DC Collector/Base Gain hfe Min: 40 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Continuous Collector Current: - 1 A DC Current Gain hFE Max: 250 Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP52
• BCP52,135
  NXP Semiconductors — Philips Semiconductors BCP52,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 60 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 1.5 A Gain Bandwidth Product fT: 145 MHz DC Collector/Base Gain hfe Min: 40 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 Continuous Collector Current: - 1 A DC Current Gain hFE Max: 250 Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: /T3 BCP52
• BCP52 /T3
  NXP Semiconductors — NXP Semiconductors BCP52 /T3 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V Dc Current Gain Hfe Max: 63 at 5 mA at 2 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 145 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1000 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-73 Part # Aliases: BCP52,135 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
• BCP52S62Z
  Fairchild Semiconductor — Fairchild Semiconductor BCP52S62Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1.2 A Collector-emitter Voltage-Max: 60 V
• BCP5216TA
  Diodes — Diodes BCP5216TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5216TA
  Diodes — Diodes BCP5216TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 100 at 150 mA at 2V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 100 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5210TA
  Diodes — Diodes BCP5210TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP5210TA
  Diodes — Diodes BCP5210TA Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 63 at 150 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-223 DC Current Gain hFE Max: 63 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C
• BCP52L99Z
  TI (Texas Instruments) — TI (Texas Instruments) BCP52L99Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: COLLECTOR Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Power Dissipation Ambient-Max: 1.5 W Transistor Type: GENERAL PURPOSE POWER DC Current Gain-Min (hFE): 25 Collector Current-Max (IC): 1.2 A Collector-emitter Voltage-Max: 60 V