Результаты поиска SS41

Найдено 296 результатов.

• PBSS4160PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4160PAN,115 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 90 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 290 Dc Current Gain Hfe Max: 430 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 175 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 175 MHz DC Collector/Base Gain hfe Min: 290 DC Current Gain hFE Max: 430
• 1SS412(TE85L,F)
  Toshiba Semiconductor and Storage — DIODE ARRAY GP 80V 100MA USM
• PBSS4160PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4160PANP,115 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 90 mV, - 125 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 290, 245 Dc Current Gain Hfe Max: 430, 245 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 175 MHz, 125 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV, - 125 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 175 MHz, 125 MHz DC Collector/Base Gain hfe Min: 290, 245 DC Current Gain hFE Max: 430, 245
• PBSS4160PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4160PANP,115 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 90 mV, - 125 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 290, 245 Dc Current Gain Hfe Max: 430, 245 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 175 MHz, 125 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV, - 125 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 175 MHz, 125 MHz DC Collector/Base Gain hfe Min: 290, 245 DC Current Gain hFE Max: 430, 245
• PBSS4130PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4130PANP,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 75 mV, - 85 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240, 250 Dc Current Gain Hfe Max: 370, 350 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 165 MHz, 125 MHz Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 75 mV, - 85 mV Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 165 MHz, 125 MHz DC Collector/Base Gain hfe Min: 240, 250 DC Current Gain hFE Max: 370, 350
• PBSS4130PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4130PANP,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 75 mV, - 85 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240, 250 Dc Current Gain Hfe Max: 370, 350 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 165 MHz, 125 MHz Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 75 mV, - 85 mV Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 165 MHz, 125 MHz DC Collector/Base Gain hfe Min: 240, 250 DC Current Gain hFE Max: 370, 350
• PBSS4112PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4112PANP,115 Collector- Base Voltage Vcbo: 120 V Collector- Emitter Voltage Vceo Max: 120 V Collector-emitter Saturation Voltage: 90 mV, - 150 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240, 190 Dc Current Gain Hfe Max: 305, 375 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz, 100 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 120 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV, - 150 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 120 MHz, 100 MHz DC Collector/Base Gain hfe Min: 240, 190 DC Current Gain hFE Max: 305, 375
• PBSS4112PANP,115
  NXP Semiconductors — NXP Semiconductors PBSS4112PANP,115 Collector- Base Voltage Vcbo: 120 V Collector- Emitter Voltage Vceo Max: 120 V Collector-emitter Saturation Voltage: 90 mV, - 150 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240, 190 Dc Current Gain Hfe Max: 305, 375 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz, 100 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN/PNP RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 120 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV, - 150 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 120 MHz, 100 MHz DC Collector/Base Gain hfe Min: 240, 190 DC Current Gain hFE Max: 305, 375
• SS4-10-3.50-L-D-K-TR
  Samtec — Samtec SS4-10-3.50-L-D-K-TR Contact Material: Phosphor Bronze Gender: Female RoHS: Compliant Alternative: Samtec Inc SS4-10-3.50-L-D-K-TR,SAMT SS4-10-3.50-L-D-K-TR,SANTEC SS4-10-3.50-L-D-K-TR,SAMTECH SS4-10-3.50-L-D-K-TR,SAMTEK SS4-10-3.50-L-D-K-TR,SMT SS4-10-3.50-L-D-K-TR,SMTC SS4-10-3.50-L-D-K-TR,SAT SS4-10-3.50-L-D-K-TR,SAC SS4-10-3.50-L-D-K-TR,SAMTE SS4-10-3.50-L-D-K-TR,SAMTEC USA SS4-10-3.50-L-D-K-TR,SAMTEC INC (VA) SS4-10-3.50-L-D-K-TR,SAMZ SS4-10-3.50-L-D-K-TR,SAMTEC INCORPORATED SS4-10-3.50-L-D-K-TR,SAMTEC/NO SS4-10-3.50-L-D-K-TR,SAMTEC/NONE SS4-10-3.50-L-D-K-TR,SAMTEC (EUROPE)LTD SS4-10-3.50-L-D-K-TR,ST$ SS4-10-3.50-L-D-K-TR,SAMLEX AMERICA SS4-10-3.50-L-D-K-TR
• SS4-10-3.00-L-D-K-TR
  Samtec — Samtec SS4-10-3.00-L-D-K-TR Contact Material: Phosphor Bronze Gender: Female RoHS: Compliant Alternative: Samtec Inc SS4-10-3.00-L-D-K-TR,SAMT SS4-10-3.00-L-D-K-TR,SANTEC SS4-10-3.00-L-D-K-TR,SAMTECH SS4-10-3.00-L-D-K-TR,SAMTEK SS4-10-3.00-L-D-K-TR,SMT SS4-10-3.00-L-D-K-TR,SMTC SS4-10-3.00-L-D-K-TR,SAT SS4-10-3.00-L-D-K-TR,SAC SS4-10-3.00-L-D-K-TR,SAMTE SS4-10-3.00-L-D-K-TR,SAMTEC USA SS4-10-3.00-L-D-K-TR,SAMTEC INC (VA) SS4-10-3.00-L-D-K-TR,SAMZ SS4-10-3.00-L-D-K-TR,SAMTEC INCORPORATED SS4-10-3.00-L-D-K-TR,SAMTEC/NO SS4-10-3.00-L-D-K-TR,SAMTEC/NONE SS4-10-3.00-L-D-K-TR,SAMTEC (EUROPE)LTD SS4-10-3.00-L-D-K-TR,ST$ SS4-10-3.00-L-D-K-TR,SAMLEX AMERICA SS4-10-3.00-L-D-K-TR