Результаты поиска F4-12
Найдено 446 результатов.
- Silicon Laboratories — Silicon Laboratories C8051F412-GQR Product Category: 8-bit Microcontrollers - MCU RoHS: yes Core: 8051 Data Bus Width: 8 bit Maximum Clock Frequency: 50 MHz Program Memory Size: 16 KB Data RAM Size: 2.25 KB On-Chip ADC: Yes Operating Supply Voltage: 2 V to 5.25 V Maximum Operating Temperature: + 85 C Package / Case: LQFP Mounting Style: SMD/SMT Interface Type: I2C, SMBus, SPI, UART Minimum Operating Temperature: - 40 C Number of Programmable I/Os: 24 Number of Timers: 4 Processor Series: C8051 Program Memory Type: Flash Factory Pack Quantity: 500
- Panasonic Electronic Components — Panasonic Electronic Components ERJ-2RKF4122X Case: 0402 (1005 metric) Composition: Thick Film Features: - Height: 0.014" (0.35mm) Lead Style: Surface Mount (SMD - SMT) Package / Case: 0402 (1005 Metric) Power (watts): 0.1W, 1/10W Resistance (ohms): 41.2K Resistance In Ohms: 41.2K Series: ERJ Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: В±100ppm/В°C Tolerance: В±1% Other Names: ERJ2RKF4122X, P41.2KLTR
- National Semiconductor — National Semiconductor LF412ACN/NOPB -3db Bandwidth: - Amplifier Case Style: DIP Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 3.6 mA Dual Supply Voltage (max): В±22V Dual Supply Voltage (min): В±5V Dual Supply Voltage (typ): В±9/В±12/В±15/В±18V Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 152 В°C/W Input Bias Current: 200pA Input Offset Voltage: 1@В±20VmV Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting: Through Hole Mounting Type: Through Hole No. Of Amplifiers: 2 No. Of Pins: 8 Number Of Elements: 2 Number Of Amplifiers: Dual Number Of Circuits: 2 Op Amp Type: High Speed Operating Temp Range: 0C to 70C Operating Temperature: 0В°C ~ 70В°C Operating Temperature Classification: Commercial Operating Temperature Range: 0°C To +70°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: DIP-8 Pin Count: 8 Power Dissipation: 670mW Power Supply Rejection Ratio: 80dB Power Supply Requirement: Dual Rail/rail I/o Type: No Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET IIв„ў Shut Down Feature: No Single Supply Voltage (max): Not RequiredV Single Supply Voltage (min): Not RequiredV Single Supply Voltage (typ): Not RequiredV Slew Rate: 15 V/Вµs Supply Voltage Range: 10V To 44V Technology: BiFET Temperature, Operating, Range: 0 to +70 В°C Type: General Purpose Amplifier Unity Gain Bandwidth Product: 4MHz Voltage - Input Offset: 500ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage Gain In Db: 106.02dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 45 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±19 V Other Names: *LF412ACN, *LF412ACN/NOPB, LF412ACN
- National Semiconductor — National Semiconductor LF412ACN/NOPB -3db Bandwidth: - Amplifier Case Style: DIP Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 25 mA Current, Supply: 3.6 mA Dual Supply Voltage (max): В±22V Dual Supply Voltage (min): В±5V Dual Supply Voltage (typ): В±9/В±12/В±15/В±18V Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Impedance, Thermal: 152 В°C/W Input Bias Current: 200pA Input Offset Voltage: 1@В±20VmV Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting: Through Hole Mounting Type: Through Hole No. Of Amplifiers: 2 No. Of Pins: 8 Number Of Elements: 2 Number Of Amplifiers: Dual Number Of Circuits: 2 Op Amp Type: High Speed Operating Temp Range: 0C to 70C Operating Temperature: 0В°C ~ 70В°C Operating Temperature Classification: Commercial Operating Temperature Range: 0°C To +70°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: DIP-8 Pin Count: 8 Power Dissipation: 670mW Power Supply Rejection Ratio: 80dB Power Supply Requirement: Dual Rail/rail I/o Type: No Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET IIв„ў Shut Down Feature: No Single Supply Voltage (max): Not RequiredV Single Supply Voltage (min): Not RequiredV Single Supply Voltage (typ): Not RequiredV Slew Rate: 15 V/Вµs Supply Voltage Range: 10V To 44V Technology: BiFET Temperature, Operating, Range: 0 to +70 В°C Type: General Purpose Amplifier Unity Gain Bandwidth Product: 4MHz Voltage - Input Offset: 500ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage Gain In Db: 106.02dB Voltage, Gain: 200 V/mV Voltage, Input: 10 to 45 V Voltage, Noise: 25 nV/sqrt Hz Voltage, Offset: 0.5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: В±19 V Other Names: *LF412ACN, *LF412ACN/NOPB, LF412ACN
- Rohm Semiconductor — RES SMD 41.2K OHM 1% 1/10W 0603
- Samsung Electro-Mechanics America, Inc — RES SMD 4.12K OHM 1% 1/16W 0402
- Samsung Electro-Mechanics America, Inc — RES SMD 41.2K OHM 1% 1/10W 0603
- Rohm Semiconductor — RES SMD 412 OHM 1% 1/8W 0805
- Samsung Electro-Mechanics America, Inc — RES SMD 41.2K OHM 1% 1/20W 0201
- Rohm Semiconductor — RES SMD 412 OHM 1% 1/2W 2010
