Результаты поиска SS41

Найдено 296 результатов.

• Q3.2768-SS4-12-100
  JAUCH [Jauch Quartz Gmbh] — Quartz Crystal
• PBSS4160PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4160PAN,115 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 90 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 290 Dc Current Gain Hfe Max: 430 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 175 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 175 MHz DC Collector/Base Gain hfe Min: 290 DC Current Gain hFE Max: 430
• PBSS4160DPN,115
  NXP Semiconductors — NXP Semiconductors PBSS4160DPN,115 Collector- Emitter Voltage Vceo Max: +/- 60 V Configuration: Dual Continuous Collector Current: 1 A, - 900 mA Current - Collector (ic) (max): 870mA, 770mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz, 185MHz ID_COMPONENTS: 1949676 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: +/- 2 A Maximum Operating Frequency: 220 MHz, 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 420mW Power Dissipation: 290 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: NPN, PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: +/- 2 A Gain Bandwidth Product fT: 185 MHz, 220 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 290 mW, 420 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160DPN T/R Other Names: 568-4352-2, 934058119115, PBSS4160DPN T/R
• PBSS4160DPN,115
  NXP Semiconductors — NXP Semiconductors PBSS4160DPN,115 Collector- Emitter Voltage Vceo Max: +/- 60 V Configuration: Dual Continuous Collector Current: 1 A, - 900 mA Current - Collector (ic) (max): 870mA, 770mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz, 185MHz ID_COMPONENTS: 1949676 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: +/- 2 A Maximum Operating Frequency: 220 MHz, 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 420mW Power Dissipation: 290 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: NPN, PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: +/- 2 A Gain Bandwidth Product fT: 185 MHz, 220 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 290 mW, 420 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160DPN T/R Other Names: 568-4352-2, 934058119115, PBSS4160DPN T/R
• PBSS4160DPN T/R
  NXP Semiconductors — NXP Semiconductors PBSS4160DPN T/R Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Dual Continuous Collector Current: 1 A at NPN, 0.9 A at PNP Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 220 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 700 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: TSOP Part # Aliases: PBSS4160DPN,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN/PNP
• PBSS4140DPN,115
  NXP Semiconductors — NXP Semiconductors PBSS4140DPN,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Dual Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 150MHz ID_COMPONENTS: 1949557 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 150 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 600mW Power Dissipation: 370 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: NPN, PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 40V Other Names: 568-4153-2, 934056660115, PBSS4140DPN T/R
• PBSS4130PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4130PAN,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 75 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240 Dc Current Gain Hfe Max: 370 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 165 MHz Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 75 mV Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 165 MHz DC Collector/Base Gain hfe Min: 240 DC Current Gain hFE Max: 370
• PBSS4130PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4130PAN,115 Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 30 V Collector-emitter Saturation Voltage: 75 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240 Dc Current Gain Hfe Max: 370 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 165 MHz Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 75 mV Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 165 MHz DC Collector/Base Gain hfe Min: 240 DC Current Gain hFE Max: 370
• PBSS4112PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4112PAN,115 Collector- Base Voltage Vcbo: 120 V Collector- Emitter Voltage Vceo Max: 120 V Collector-emitter Saturation Voltage: 90 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240 Dc Current Gain Hfe Max: 375 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 120 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 120 MHz DC Collector/Base Gain hfe Min: 240 DC Current Gain hFE Max: 375
• PBSS4112PAN,115
  NXP Semiconductors — NXP Semiconductors PBSS4112PAN,115 Collector- Base Voltage Vcbo: 120 V Collector- Emitter Voltage Vceo Max: 120 V Collector-emitter Saturation Voltage: 90 mV Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 240 Dc Current Gain Hfe Max: 375 Emitter- Base Voltage Vebo: 7 V Gain Bandwidth Product Ft: 120 MHz Maximum Dc Collector Current: 1.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1450 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DFN2020-6 Rohs: yes Transistor Polarity: NPN RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 120 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 90 mV Maximum DC Collector Current: 1.5 A Gain Bandwidth Product fT: 120 MHz DC Collector/Base Gain hfe Min: 240 DC Current Gain hFE Max: 375