Результаты поиска SK34
Найдено 310 результатов.
- Renesas Electronics America — MOSFET N-CH 40V 80A TO220AB
- Renesas Electronics America — MOSFET N-CH 40V 83A TO220AB
- Fuji Electric — N CHANNEL SILICON POWER MOSFET
- Renesas Electronics —
- Renesas Electronics —
- Renesas Electronics —
- Renesas Electronics — Renesas Electronics 2SK3434-S-AZ Mfr Package Description: MP-25 FIN CUT, 3 PIN Lead Free: Yes Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.5 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 48 A DS Breakdown Voltage-Min: 60 V Avalanche Energy Rating (Eas): 78 mJ Drain-source On Resistance-Max: 0.0310 ohm Pulsed Drain Current-Max (IDM): 120 A
- Renesas Electronics — Renesas Electronics 2SK3431-Z-AZ Mfr Package Description: MP-25Z, TO-220SMD, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.5 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 83 A DS Breakdown Voltage-Min: 40 V Avalanche Energy Rating (Eas): 423 mJ Drain-source On Resistance-Max: 0.0089 ohm Pulsed Drain Current-Max (IDM): 332 A
- Fuji Electric —
- Fuji Electric —