Результаты поиска SS41

Найдено 296 результатов.

• Q4.000-SS4-12-100
  JAUCH [Jauch Quartz Gmbh] — Quartz Crystal
• Q4.500-SS4-12-100
  JAUCH [Jauch Quartz Gmbh] — Quartz Crystal
• Q6.000-SS4-12-100
  JAUCH [Jauch Quartz Gmbh] — Quartz Crystal
• Q7.000-SS4-12-100
  JAUCH [Jauch Quartz Gmbh] — Quartz Crystal
• 1SS416CT(TPL3)
  Toshiba — Diodes - Varicap Hi-Speed 30V 100mA
• 1SS417CT(TPL3)
  Toshiba — Diodes - Varicap Hi-Speed 40V 100mA
• PBSS4140DPN T/R
  NXP — Transistors - Dual NPN/PNP 40V 1A
• PBSS4160DS,115
  NXP Semiconductors — NXP Semiconductors PBSS4160DS,115 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Dual Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz ID_COMPONENTS: 1949503 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 420mW Power Dissipation: 290 mW Series: - Transistor Polarity: NPN/NPN Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 290 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160DS T/R Other Names: 568-4350-2, 934058115115, PBSS4160DS T/R
• PBSS4160DS T/R
  NXP Semiconductors — NXP Semiconductors PBSS4160DS T/R Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Dual Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 220 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 700 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: TSOP Part # Aliases: PBSS4160DS,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• 1SS419(TPL3,F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 1SS419(TPL3,F) Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (io): 100mA Current - Reverse Leakage @ Vr: 5ВµA @ 40V Diode Type: Schottky Mounting Type: Surface Mount Package / Case: 1-1K1A Reverse Recovery Time (trr): - Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 40V Voltage - Forward (vf) (max) @ If: 620mV @ 50mA Product Category: Schottky Diodes & Rectifiers RoHS: yes Product: Schottky Diodes Peak Reverse Voltage: 45 V Forward Continuous Current: 0.2 A Max Surge Current: 1 A Configuration: Single Forward Voltage Drop: 0.62 V at 0.05 A Maximum Reverse Leakage Current: 5 uA Operating Temperature Range: + 125 C Mounting Style: SMD/SMT Factory Pack Quantity: 10000 Other Names: 1SS419(TPL3F)