Результаты поиска SS41

Найдено 296 результатов.

• PBSS4140U,135
  Philips Semiconductors — Philips Semiconductors PBSS4140U,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 300 at 1 mA at 5 V, 300 at 500 mA at 5 V, 200 at 1 A at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: UMT DC Current Gain hFE Max: 300 at 1 mA at 5 V Maximum Power Dissipation: 350 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4140U
• PBSS4160V,115
  NXP Semiconductors — NXP Semiconductors PBSS4160V,115 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Quad Collector Current - Collector (ic) (max): 900mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz ID_COMPONENTS: 1949610 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 500mW Power Dissipation: 500 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 250 at 1 mA at 5 V, 200 at 500 mA at 5 V, 100 at 1 A at 5 V DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 500 mW Factory Pack Quantity: 4000 Part # Aliases: PBSS4160V T/R Other Names: 934058118115, PBSS4160V T/R
• PBSS4160V T/R
  NXP Semiconductors — NXP Semiconductors PBSS4160V T/R Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 220 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SS-Mini Part # Aliases: PBSS4160V,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• PBSS4160U,115
  NXP Semiconductors — NXP Semiconductors PBSS4160U,115 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Current - Collector (ic) (max): 750mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz ID_COMPONENTS: 1949725 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 415mW Power Dissipation: 415 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 280mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 250 at 1 mA at 5 V, 200 at 500 mA at 5 V, 100 at 1 A at 5 V DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 415 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160U T/R Other Names: 934058117115, PBSS4160U T/R
• PBSS4160U T/R
  NXP Semiconductors — NXP Semiconductors PBSS4160U T/R Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 220 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 415 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-70 Part # Aliases: PBSS4160U,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• PBSS4160T,215
  NXP Semiconductors — NXP Semiconductors PBSS4160T,215 Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 250 Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 220MHz ID_COMPONENTS: 1949584 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 400mW Power Dissipation: 270 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 250 DC Current Gain hFE Max: 250 at 1 mA at 5 V Maximum Power Dissipation: 270 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4160T T/R Other Names: 568-4343-2, 934057667215, PBSS4160T T/R
• PBSS4160T T/R
  NXP Semiconductors — NXP Semiconductors PBSS4160T T/R Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 0.9 A Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 220 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: PBSS4160T,215 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN
• PBSS4160K,115
  NXP Semiconductors — NXP Semiconductors PBSS4160K,115 Current - Collector (ic) (max): 750mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 220MHz Mounting Type: Surface Mount Package / Case: SC-59-3, SMT3, SOT-346, TO-236 Power - Max: 425mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 280mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Other Names: 934058116115, PBSS4160K T/R
• PBSS4140V,115
  NXP Semiconductors — NXP Semiconductors PBSS4140V,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Quad Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 150MHz ID_COMPONENTS: 1949766 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 150 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 500mW Power Dissipation: 1200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 440mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 300 at 1 mA at 5 V, 300 at 500 mA at 5 V, 200 at 1 A at 5 V, 75 at 2 A at 5 V DC Current Gain hFE Max: 300 at 1 mA at 5 V Maximum Power Dissipation: 1200 mW Factory Pack Quantity: 4000 Part # Aliases: PBSS4140V T/R Other Names: 934056508115, PBSS4140V T/R
• PBSS4140V T/R
  NXP Semiconductors — NXP Semiconductors PBSS4140V T/R Collector- Base Voltage Vcbo: 40 V Collector- Emitter Voltage Vceo Max: 40 V Collector-emitter Saturation Voltage: 5 V Configuration: Single Continuous Collector Current: 1 A Dc Collector/base Gain Hfe Min: 300 at 1 mA at 5 V Emitter- Base Voltage Vebo: 5 V Factory Pack Quantity: 4000 Gain Bandwidth Product Ft: 150 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1200 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SS-Mini Part # Aliases: PBSS4140V,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN