Результаты поиска BAS16

Найдено 521 результатов.

• BAS16WS-V
  Siliconix —
• BAS16WS-G
  Sensitron Semiconductor — Sensitron Semiconductor BAS16WS-G Mfr Package Description: GREEN, PLASTIC PACKAGE-2 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.2000 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0060 us Rep Pk Reverse Voltage-Max: 75 V Average Forward Current-Max: 0.1500 A
• BAS16TW-C
  Secos Corporation — Secos Corporation BAS16TW-C Mfr Package Description: HALOGEN AND LEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-6 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 6 Package Body Material: PLASTIC/EPOXY Configuration: SEPARATE, 3 ELEMENTS Number of Elements: 3 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.2000 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0040 us Rep Pk Reverse Voltage-Max: 75 V Average Forward Current-Max: 0.1500 A
• BAS16 T/R
  Philips Semiconductors —
• BAS16VTB6
  Pan Jit International —
• BAS16_SER
  NXP Semiconductors —
• BAS16W135
  NXP Semiconductors — NXP Semiconductors BAS16W135 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.2000 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0040 us Rep Pk Reverse Voltage-Max: 85 V Average Forward Current-Max: 0.1750 A
• BAS16.215
  NXP Semiconductors — NXP Semiconductors BAS16.215 Diode Type: Small Signal Forward Current If(av): 215mA Forward Surge Current Ifsm Max: 4A Forward Voltage Vf Max: 1.25V Operating: RoHS Compliant Repetitive Reverse Voltage Vrrm Max: 85V Reverse Recovery Time Trr Max: 4ns
• BAS16,235
  NXP Semiconductors — NXP Semiconductors BAS16,235 Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 215mA (DC) Current - Reverse Leakage @ Vr: 500nA @ 80V Diode Type: Standard Forward Continuous Current: 0.215 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942167 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 4 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 0.5 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Peak Reverse Voltage: 100 V Product: Switching Diodes Recovery Time: 4 ns Reverse Recovery Time (trr): 4ns Series: - Speed: Fast Recovery = 200mA (Io) Voltage - Dc Reverse (vr) (max): 100V Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 10000 Part # Aliases: /T3 BAS16 Other Names: 933460620235, BAS16 /T3
• BAS16D87Z
  TI (Texas Instruments) — TI (Texas Instruments) BAS16D87Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Diode Element Material: SILICON Power Dissipation Limit-Max: 0.3500 W Diode Type: SIGNAL DIODE Reverse Recovery Time-Max: 0.0060 us Rep Pk Reverse Voltage-Max: 75 V Average Forward Current-Max: 0.2000 A