Результаты поиска 830B

Найдено 403 результатов.

• K7A161830B-PC160
  Samsung Semiconductor — Samsung Semiconductor K7A161830B-PC160 Package: TQFP
• PSMN1R8-30BL,118
  NXP Semiconductors — NXP Semiconductors PSMN1R8-30BL,118 Configuration: Single Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 800 Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: D2PAK Power Dissipation: 270 W Resistance Drain-source Rds (on): 1.8 mOhms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.8 mOhms
• PSMN1R8-30BL,118
  NXP Semiconductors — NXP Semiconductors PSMN1R8-30BL,118 Configuration: Single Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 800 Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: D2PAK Power Dissipation: 270 W Resistance Drain-source Rds (on): 1.8 mOhms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.8 mOhms
• BUK962R8-30B,118
  NXP Semiconductors — NXP Semiconductors BUK962R8-30B,118 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 89nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950473 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0024 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934057089118::BUK962R8-30B /T3::BUK962R8-30B /T3
• BUK962R8-30B /T3
  NXP Semiconductors — NXP Semiconductors BUK962R8-30B /T3 Configuration: Single Continuous Drain Current: 75 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 800 Fall Time: 195 ns Gate-source Breakdown Voltage: +/- 15 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-404 Part # Aliases: BUK962R8-30B,118 Power Dissipation: 300 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.0024 Ohms Rise Time: 222 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 260 ns
• BUK952R8-30B,127
  NXP Semiconductors — NXP Semiconductors BUK952R8-30B,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 89nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950488 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0024 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.0024 Ohms Fall Time: 195 ns Rise Time: 222 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 260 ns Part # Aliases: BUK952R8-30B Other Names: 934057088127::BUK952R8-30B::BUK952R8-30B
• PAT0603E3830BST1
  Vishay Thin Film — RES SMD 383 OHM 0.1% 0.15W 0603
• PAT0603E5830BST1
  Vishay Thin Film — RES SMD 583 OHM 0.1% 0.15W 0603
• PAT0805E3830BST1
  Vishay Thin Film — RES SMD 383 OHM 0.1% 1/5W 0805
• PAT0805E5830BST1
  Vishay Thin Film — RES SMD 583 OHM 0.1% 1/5W 0805