Результаты поиска SS35

Найдено 284 результатов.

• DSS-351MS04F
  Mitsubishi Semiconductor —
• DSS-351MA12B
  Mitsubishi Semiconductor —
• DSS-351MC12F
  Mitsubishi Semiconductor —
• DSS-351MA04R
  Mitsubishi Semiconductor —
• 1SS352(TH3,F,T)
  Toshiba — Diodes - Varicap Vr=80V If=0.1A 2Pin
• PBSS3540E T/R
  NXP Semiconductors — NXP Semiconductors PBSS3540E T/R Collector- Base Voltage Vcbo: 40 V Collector- Emitter Voltage Vceo Max: 40 V Collector-emitter Saturation Voltage: 6 V Configuration: Single Continuous Collector Current: 0.5 A Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V Emitter- Base Voltage Vebo: 6 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 300 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-75 Part # Aliases: PBSS3540E,115 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
• PBSS3515M T/R
  NXP Semiconductors — NXP Semiconductors PBSS3515M T/R Collector- Base Voltage Vcbo: 15 V Collector- Emitter Voltage Vceo Max: 15 V Collector-emitter Saturation Voltage: 6 V Configuration: Single Continuous Collector Current: 0.5 A Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V Emitter- Base Voltage Vebo: 6 V Factory Pack Quantity: 10000 Gain Bandwidth Product Ft: 280 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 430 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SC-101 Part # Aliases: PBSS3515M,315 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
• PBSS3515E,135
  NXP Semiconductors — NXP Semiconductors PBSS3515E,135 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 280MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Power - Max: 250mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 15V
• PBSS3515E,115
  NXP Semiconductors — NXP Semiconductors PBSS3515E,115 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 280MHz ID_COMPONENTS: 1949602 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 280 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 15 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 280 MHz DC Collector/Base Gain hfe Min: 200 at 10 mA at 2 V, 150 at 100 mA at 2 V, 90 at 500 mA at 2 V DC Current Gain hFE Max: 200 at 10 mA at 2 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS3515E T/R Other Names: 934059167115::PBSS3515E T/R::PBSS3515E T/R
• PBSS3515E,115
  NXP Semiconductors — NXP Semiconductors PBSS3515E,115 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 280MHz ID_COMPONENTS: 1949602 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 280 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 15 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 280 MHz DC Collector/Base Gain hfe Min: 200 at 10 mA at 2 V, 150 at 100 mA at 2 V, 90 at 500 mA at 2 V DC Current Gain hFE Max: 200 at 10 mA at 2 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS3515E T/R Other Names: 934059167115::PBSS3515E T/R::PBSS3515E T/R