Результаты поиска 4N25

Найдено 255 результатов.

• IPB64N25S3-20
  Infineon Technologies — Infineon Technologies IPB64N25S3-20 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 250 V Continuous Drain Current: 64 A Resistance Drain-Source RDS (on): 20 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Package / Case: TO-263 Fall Time: 12 ns Gate Charge Qg: 67 nC Minimum Operating Temperature: - 55 C Power Dissipation: 300 W Rise Time: 20 ns Series: xPB64N25 Typical Turn-Off Delay Time: 45 ns Part # Aliases: IPB64N25S320ATMA1
• 4N25(SHORT,F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 4N25(SHORT,F) Product Category: Transistor Output Optocouplers RoHS: yes Input Type: DC Maximum Collector Emitter Voltage: 30 V Maximum Collector Emitter Saturation Voltage: 0.5 V Isolation Voltage: 2500 Vrms Current Transfer Ratio: 100 % Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 10 mA Maximum Power Dissipation: 250 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: PDIP-6 Forward Current: 10 mA Maximum Reverse Diode Voltage: 3 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Output Type: DC Factory Pack Quantity: 50
• 844N255AKILFT
  IDT, Integrated Device Technology Inc — IC SYNTHESIZER LVPECL 48VFQFN
• SPX1004N-2-5/TR
  SIPEX [Sipex Corporation] — 1.2V / 2.5V Micropower Voltage Reference
• OL5204N-25/P20
  Oki Electronic Components —
• 4N25A(SHORT,F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 4N25A(SHORT,F) Current - Dc Forward (if): 80mA Current - Output / Channel: 100mA Current Transfer Ratio (max): - Current Transfer Ratio (min): 20% @ 10mA Input Type: DC Mounting Type: Through Hole Number Of Channels: 1 Output Type: Transistor with Base Package / Case: 6-DIP Series: - Vce Saturation (max): 500mV Voltage - Isolation: 2500Vrms Voltage - Output: 70V Other Names: 4N25ASHORTF
• 4N25SHORT-TP1F
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 4N25SHORT-TP1F Configuration: 1 Channel Current Transfer Ratio: 100 % Forward Current: 10 mA Input Type: DC Isolation Voltage: 2500 Vrms Maximum Collector Emitter Saturation Voltage: 0.5 V Maximum Collector Emitter Voltage: 30 V Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 250 mW Maximum Reverse Diode Voltage: 3 V Minimum Forward Diode Voltage: 0.9 V Minimum Operating Temperature: - 55 C Output Device: Phototransistor Output Type: DC Package / Case: SO-6
• 413-K14-N2-50A
  E-T-A — CIR BRKR THRM 50A 115VAC 28VDC
• 413-K54-N2-50A
  E-T-A — CIR BRKR THRM 50A 115VAC 28VDC
• FDPF44N25TRDTU
  Fairchild Semiconductor — MOSFET N-CH 250V 44A TO-220F