Результаты поиска TLP181(F)

Найдено 25 результатов.

• TLP181(TPR)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(TPR) Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 50% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: TLP181TPR, TLP181TR
• TLP181(GB,F,T)
  Toshiba — Power - DC-DC Converters DC Transistor Miniflat
• TLP181(TPR,F)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(TPR,F) Input Type: DC Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.4 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 600 % Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 20 mA Maximum Collector Current: 10 mA Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SMD-4 Forward Current: 16 mA Maximum Fall Time: 3 us Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 2 us Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Output Type: DC
• TLP181(Y-TPR)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(Y-TPR) Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 150% @ 5mA Current Transfer Ratio (min): 50% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: TLP181YTPR, TLP181YTR
• TLP181(BL-TPR)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(BL-TPR) Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 200% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: TLP181BLTPR, TLP181BLTR
• TLP181(GB-TPR)
  TOSHIBA Semiconductor —
• TLP181(GR-TPR)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(GR-TPR) Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 300% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: TLP181GRTPR, TLP181GRTR
• TLP181(GB-TPL,F,T)
  Toshiba — Power - DC-DC Converters DC Transistor Miniflat
• TLP181(TPR,F,T)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(TPR,F,T) Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 50% @ 5mA Input Type: DC Mounting Type: Surface Mount Number Of Channels: 1 Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V
• TLP181(Y-TPRFT)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP181(Y-TPRFT) Configuration: 1 Channel Current Transfer Ratio: 50 % to 150 % Forward Current: 10 mA Isolation Voltage: 3750 Vrms Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 200 mW Minimum Forward Diode Voltage: 1 V Minimum Operating Temperature: - 55 C Output Device: Phototransistor Package / Case: SMD-4