Результаты поиска HQCEGA182KAT9A

Найдено 18 результатов.

• HQCEGA182KAT9A
  AVX Corporation — CAP RF 1800PF 2000V 10% SMD
• BLF6G10L-260PBM
  Philips Semiconductors — Philips Semiconductors BLF6G10L-260PBM RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 0.7 GHz to 1 GHz Gain: 22 dB Output Power: 40 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 64 A Gate-Source Breakdown Voltage: +/- 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-1110A Mounting Style: SMD/SMT Factory Pack Quantity: 100
• BLF6G10L-260PRN
  NXP Semiconductors — NXP Semiconductors BLF6G10L-260PRN RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 0.7 GHz to 1 GHz Gain: 22 dB Output Power: 40 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 64 A Gate-Source Breakdown Voltage: +/- 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-539A Mounting Style: SMD/SMT Resistance Drain-Source RDS (on): 0.1 Ohms Factory Pack Quantity: 100
• BLF6G10L-260PRN,11
  NXP Semiconductors — NXP Semiconductors BLF6G10L-260PRN,11 Configuration: Single Continuous Drain Current: 64 A Current - Test: 1.8A Current Rating: 64A Drain-source Breakdown Voltage: 65 V Frequency: 917.5MHz ~ 962.5MHz Gain: 22dB ID_COMPONENTS: 3738122 Noise Figure: - Package / Case: SOT539A Power - Output: 40W Resistance Drain-source Rds (on): 0.1 Ohms Series: - Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V
• BLF6G10L-260PBM,11
  NXP Semiconductors — NXP Semiconductors BLF6G10L-260PBM,11 Series: - RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 0.7 GHz to 1 GHz Gain: 22 dB Output Power: 40 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 64 A Gate-Source Breakdown Voltage: +/- 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-1110A Mounting Style: SMD/SMT Factory Pack Quantity: 20
• BLF6G10L-260PBM,11
  NXP Semiconductors — NXP Semiconductors BLF6G10L-260PBM,11 Series: - RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 0.7 GHz to 1 GHz Gain: 22 dB Output Power: 40 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 64 A Gate-Source Breakdown Voltage: +/- 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-1110A Mounting Style: SMD/SMT Factory Pack Quantity: 20
• BLF6G10L-260PRN:11
  NXP Semiconductors — TRANS PWR LDMOS SOT539A
• BLF6G10L-260PBM:11
  NXP Semiconductors — TRANS LDMOS SOT1110A3/B3