Результаты поиска BSS63

Найдено 25 результатов.

• BSS63-T3
  Zetex Semiconductors —
• BSS63LT1G
  ON Semiconductor — Transistors Bipolar- General Purpose 100mA 110V PNP
• BSS63LT1G
  ON Semiconductor — TRANS PNP 100V 100MA SOT-23
• BSS63LT1G
  ON Semiconductor — TRANS PNP 100V 100MA SOT-23
• BSS63LT1-D
  ON Semiconductor — High Voltage Transistor PNP Silicon BSS63LT1
• BSS63LT1D
  ON Semiconductor —
• BSS63,215
  NXP Semiconductors — NXP Semiconductors BSS63,215 Collector- Emitter Voltage Vceo Max: - 100 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 30 Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V Emitter- Base Voltage Vebo: - 6 V Frequency - Transition: 85MHz ID_COMPONENTS: 1949460 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 100 mA Maximum Operating Frequency: 85 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 110 V Collector- Emitter Voltage VCEO Max: - 100 V Emitter- Base Voltage VEBO: - 6 V Maximum DC Collector Current: - 100 mA Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 30 DC Current Gain hFE Max: 30 at 10 mA at 1 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BSS63 T/R Other Names: 933330390215, BSS63 T/R
• BSS63 T/R
  NXP Semiconductors — NXP Semiconductors BSS63 T/R Collector- Base Voltage Vcbo: 110 V Collector- Emitter Voltage Vceo Max: 100 V Collector-emitter Saturation Voltage: 6 V Configuration: Single Continuous Collector Current: 0.1 A Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V Emitter- Base Voltage Vebo: 6 V Factory Pack Quantity: 3000 Gain Bandwidth Product Ft: 85 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: BSS63,215 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: PNP
• BSS63S62Z
  Fairchild Semiconductor — Fairchild Semiconductor BSS63S62Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: PNP Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 30 Collector Current-Max (IC): 0.2000 A Collector-emitter Voltage-Max: 100 V Transition Frequency-Nom (fT): 50 MHz
• BSS63D87Z
  TI (Texas Instruments) — TI (Texas Instruments) BSS63D87Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: PNP Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 30 Collector Current-Max (IC): 0.2000 A Collector-emitter Voltage-Max: 100 V Transition Frequency-Nom (fT): 50 MHz