Результаты поиска BCW60C

Найдено 27 результатов.

• BCW60CR-AR
  Zetex Semiconductors — SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
• BCW60CR-AR
  Zetex Semiconductors — SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
• BCW60CR-AR
  Zetex Semiconductors — SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
• BCW60C/T1
  Infineon Technologies —
• BCW60CRTC
  Diodes — Diodes BCW60CRTC Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3300 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 150 ns Turn-off Time-Max (toff): 800 ns DC Current Gain-Min (hFE): 90 Collector Current-Max (IC): 0.2000 A Collector-emitter Voltage-Max: 32 V Transition Frequency-Nom (fT): 250 MHz
• BCW60C/E8
  Vishay Intertechnology — Vishay Intertechnology BCW60C/E8 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.2500 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 150 ns Turn-off Time-Max (toff): 800 ns DC Current Gain-Min (hFE): 90 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 32 V Transition Frequency-Nom (fT): 250 MHz
• BCW60C,235
  NXP Semiconductors — NXP Semiconductors BCW60C,235 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Voltage - Collector Emitter Breakdown (max): 32V Other Names: 933324100235, BCW60C /T3
• BCW60C,215
  NXP Semiconductors — NXP Semiconductors BCW60C,215 Collector- Emitter Voltage Vceo Max: 32 V Configuration: Single Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 250 Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 250MHz ID_COMPONENTS: 1950319 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 250 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Voltage - Collector Emitter Breakdown (max): 32V Other Names: 933324100215, BCW60C T/R
• BCW60CL99Z
  Fairchild Semiconductor — Fairchild Semiconductor BCW60CL99Z Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3500 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL Turn-on Time-Max (ton): 150 ns Turn-off Time-Max (toff): 800 ns DC Current Gain-Min (hFE): 90 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 32 V Transition Frequency-Nom (fT): 125 MHz
• BCW60CT116
  Rohm Semiconductor — TRANS NPN 32V 0.2A SST3