Результаты поиска BCP53

Найдено 84 результатов.

• BCP53-10
  Infineon — General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160
• BCP53-10
  Siemens — PNP Silicon AF Transistors (For AF driver and output stages High collector current)
• BCP5310
  Zetex Semiconductors — Obsolete
• BCP5316
  STMicroelectronics — STMicroelectronics BCP5316 Case: TO223-4 Date_code: 2003+ Quantity: 6488
• BCP5316
  STMicroelectronics — STMicroelectronics BCP5316 Case: TO223-4 Date_code: 2003+ Quantity: 6488
• BCP53TA
  Diodes — Diodes BCP53TA Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Lead Free Status / Rohs Status: Compliant Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: BCP53TR
• BCP53TA
  Diodes — Diodes BCP53TA Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Lead Free Status / Rohs Status: Compliant Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: BCP53TR
• BCP53TC
  Zetex Semiconductors — Zetex Semiconductors BCP53TC Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dc Collector/base Gain Hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 40 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 40
• BCP53TC
  Zetex Semiconductors — Zetex Semiconductors BCP53TC Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Dc Collector/base Gain Hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 40 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 40
• BCP53_13
  NXP [NXP Semiconductors] — 80 V, 1 A PNP medium power transistors