Результаты поиска BCP52

Найдено 49 результатов.

• BCP52-10
  Siemens — PNP Silicon AF Transistors (For AF driver and output stages High collector current)
• BCP5210
  Zetex Semiconductors — Obsolete
• BCP5216
  Zetex Semiconductors — Obsolete
• BCP52TA
  Diodes — Diodes BCP52TA Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 60V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 40 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Other Names: BCP52TR
• BCP52TA
  Diodes — Diodes BCP52TA Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 60V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 25 at 5 mA at 2 V, 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 40 Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Other Names: BCP52TR
• BCP52TC
  Zetex Semiconductors — Zetex Semiconductors BCP52TC Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 40 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 40
• BCP52TC
  Zetex Semiconductors — Zetex Semiconductors BCP52TC Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V Dc Current Gain Hfe Max: 40 Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 125 MHz Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-223 Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 40 at 150 mA at 2 V, 25 at 500 mA at 2 V DC Current Gain hFE Max: 40
• BCP52_13
  NXP [NXP Semiconductors] — 60 V, 1 A PNP medium power transistors
• BCP52_00
  Fairchild Semiconductor —
• BCP52-NL
  Fairchild Semiconductor — Fairchild Semiconductor BCP52-NL Package: SOT-223