Результаты поиска 2N1893

Найдено 27 результатов.

• JAN2N1893
  Microsemi — NPN Transistor
• JAN2N1893
  Microsemi — NPN Transistor
• 2N1893_03
  STMicroelectronics —
• 2N1893_02
  SEMICOA Corporation —
• 2N1893SJX
  SEMICOA Corporation —
• 2N1893CSM
  SEMELAB —
• 2N1893JAN
  Microsemi Corporation — Microsemi Corporation 2N1893JAN Collector Current (dc) (max): 500mA Collector-base Voltage(max): 120V Collector-emitter Voltage: 80V Dc Current Gain (min): 20 Emitter-base Voltage (max): 7V Mounting: Through Hole Number Of Elements: 1 Operating Temp Range: -65C to 200C Operating Temperature Classification: Military Package Type: TO-5 Pin Count: 3 Power Dissipation: 800mW Transistor Polarity: NPN
• 2N1893DWP
  Diodes — Diodes 2N1893DWP Mfr Package Description: 0.026 X 0.031 INCH, G9, DIE-2 Package Shape: RECTANGULAR Package Style: UNCASED CHIP Surface Mount: Yes Terminal Form: NO LEAD Terminal Finish: TIN LEAD Terminal Position: UPPER Number of Terminals: 2 Package Body Material: UNSPECIFIED Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 40 Collector-emitter Voltage-Max: 80 V Transition Frequency-Nom (fT): 50 MHz
• JAN2N1893S
  Microsemi — NPN Transistor
• JAN2N1893S
  Microsemi — NPN Transistor