Результаты поиска 1N4448-T
Найдено 24 результатов.
- Vishay Semiconductors — Switching Diodes Vr/75V Io/150mA
- ROHM — Diodes/Rectifiers - Arrays SWITCHING 26mm
- ROHM — Diodes/Rectifiers - Single SWITCH 150MA 100V
- Rohm Semiconductor — DIODE 75V 150MA DO35
- Philips Semiconductors — Philips Semiconductors 1N4448T/R Capacitance, Junction: 4 pF Current, Forward: 200 mA Current, Reverse: 25 nA Current, Surge: 1 A Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Package Type: SOD-27 (DO-35) Power Dissipation: 500 mW Primary Type: Rectifier Speed, Switching: Switching Temperature, Junction, Maximum: +200 В°C Time, Recovery: 4 ns Voltage, Forward: 1 V Voltage, Reverse: 100 V
- Vishay Semiconductors — Vishay Semiconductors 1N4448TAP Configuration: Single Factory Pack Quantity: 50000 Forward Continuous Current: 300 mA Forward Voltage Drop: 1 V Max Surge Current: 2 A Maximum Operating Temperature: + 175 C Maximum Power Dissipation: 500 mW Maximum Reverse Leakage Current: 0.025 uA Minimum Operating Temperature: - 65 C Mounting Style: Through Hole Operating Temperature Range: + 175 C Package / Case: DO-35 Peak Reverse Voltage: 75 V Product: Switching Diodes Product Category: Diodes - General Purpose, Power, Switching Recovery Time: 8 ns Rohs: yes
- Fairchild Semiconductor — Diodes - Small Signal Hi Conductance Fast
- Fairchild Semiconductor — Diodes - Small Signal Hi Conductance Fast
- Fairchild Semiconductor — Diodes - Small Signal Hi Conductance Fast
- Fairchild Semiconductor — DIODE HI CONDUCTANCE 100V DO-35
