Результаты поиска 1812CA392JAT1A

Найдено 32 результатов.

• FF600R12ME4
  Infineon Technologies — Infineon Technologies FF600R12ME4 Configuration: dual Housing: EconoDUAL?„? 3 Ic (max): 600.0 A Technology: IGBT4 Vce(sat) (typ): 1.75 V
• FF600R12ME4
  Infineon Technologies — Infineon Technologies FF600R12ME4 Configuration: dual Housing: EconoDUAL?„? 3 Ic (max): 600.0 A Technology: IGBT4 Vce(sat) (typ): 1.75 V
• FF450R12ME4
  Infineon Technologies —
• FF150R12ME3G
  Infineon Technologies — Infineon Technologies FF150R12ME3G Channel Type: N Collector Current (dc) (max): 200A Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 200 A Gate To Emitter Voltage (max): ?±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUAL?„? 3 ID_COMPONENTS: 3671900 Ic (max): 150.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 695 W Technology: IGBT3 Vce(sat) (typ): 1.7 V Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
• FF150R12ME3G
  Infineon Technologies — Infineon Technologies FF150R12ME3G Channel Type: N Collector Current (dc) (max): 200A Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 200 A Gate To Emitter Voltage (max): ?±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUAL?„? 3 ID_COMPONENTS: 3671900 Ic (max): 150.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 695 W Technology: IGBT3 Vce(sat) (typ): 1.7 V Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
• FF150R12ME3G
  Infineon Technologies — Infineon Technologies FF150R12ME3G Channel Type: N Collector Current (dc) (max): 200A Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 200 A Gate To Emitter Voltage (max): ?±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUAL?„? 3 ID_COMPONENTS: 3671900 Ic (max): 150.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 695 W Technology: IGBT3 Vce(sat) (typ): 1.7 V Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
• FF150R12ME3G
  Infineon Technologies — Infineon Technologies FF150R12ME3G Channel Type: N Collector Current (dc) (max): 200A Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 1.7 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 200 A Gate To Emitter Voltage (max): ?±20V Gate-emitter Leakage Current: 400 nA Housing: EconoDUAL?„? 3 ID_COMPONENTS: 3671900 Ic (max): 150.0 A Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: EconoDUAL-3 Power Dissipation: 695 W Technology: IGBT3 Vce(sat) (typ): 1.7 V Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 200 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 12
• 1812CA392JAT1A
  AVX — SMD Ceramic Capacitors 3900PF 600V 5%
• 1812CA392JAT1A
  AVX Corporation — CAP CER 3900PF 5% 630V C0G 1812
• FF300R12ME4_B11
  Infineon Technologies — Infineon Technologies FF300R12ME4_B11 Configuration: dual Housing: EconoDUAL?„? 3 Ic (max): 300.0 A Technology: IGBT4 Vce(sat) (typ): 1.75 V