Результаты поиска BC337

Найдено 181 результатов.

• BC337-25RLRP
  ON Semiconductor — ON Semiconductor BC337-25RLRP Mfr Package Description: CASE 29-04, TO-226AA, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: TIN LEAD Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.6250 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 160 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 210 MHz
• BC337-40,412
  NXP Semiconductors — NXP Semiconductors BC337-40,412 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179600412, BC337-40
• BC337-40,116
  NXP Semiconductors — NXP Semiconductors BC337-40,116 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179600116, BC337-40 T/R
• BC337-25,126
  NXP Semiconductors — NXP Semiconductors BC337-25,126 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 568-1628-3, 933179590126, BC337-25 AMO
• BC337-25,116
  NXP Semiconductors — Philips Semiconductors BC337-25,116 Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz (Min) DC Collector/Base Gain hfe Min: 160 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-54 Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 2000
• BC337-25,112
  NXP Semiconductors — NXP Semiconductors BC337-25,112 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179590112, BC337-25
• BC337-16,126
  NXP Semiconductors — NXP Semiconductors BC337-16,126 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 568-1627-3, 933179580126, BC337-16 AMO
• BC337-16,112
  NXP Semiconductors — NXP Semiconductors BC337-16,112 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179580112, BC337-16
• BC33740TA_NL
  Fairchild Semiconductor — Fairchild Semiconductor BC33740TA_NL Mfr Package Description: LEAD FREE, TO-92, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Finish: MATTE TIN Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.6250 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 170 Collector Current-Max (IC): 0.8000 A Collector-emitter Voltage-Max: 45 V Transition Frequency-Nom (fT): 100 MHz
• BC33725_D74Z
  Fairchild Semiconductor — Fairchild Semiconductor BC33725_D74Z Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.8 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 625 mW Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.8 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 160 at 100 mA at 1 V