Результаты поиска BC327

Найдено 187 результатов.

• BC327-16RL1
  ON Semiconductor —
• BC327-40-BP
  MCC (Micro Commercial Components) —
• BC327A_D26Z
  Fairchild Semiconductor — Fairchild Semiconductor BC327A_D26Z Rohs: yes RoHS: yes
• BC327A_D26Z
  Fairchild Semiconductor — Fairchild Semiconductor BC327A_D26Z Rohs: yes RoHS: yes
• BC327-25,116
  NXP Semiconductors — NXP Semiconductors BC327-25,116 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 80 MHz (Min) Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 2000 Other Names: 933179530116, BC327-25 T/R
• BC327-25,112
  NXP Semiconductors — NXP Semiconductors BC327-25,112 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179530112, BC327-25
• BC327-16,112
  NXP Semiconductors — NXP Semiconductors BC327-16,112 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 625mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 45V Other Names: 933179520112, BC327-16
• BC32725_D27Z
  Fairchild Semiconductor — Fairchild Semiconductor BC32725_D27Z Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.8 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: PNP
• BC32716_D27Z
  Fairchild Semiconductor — Fairchild Semiconductor BC32716_D27Z Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.8 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.8 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 100 mA at 1 V
• BC32716_D27Z
  Fairchild Semiconductor — Fairchild Semiconductor BC32716_D27Z Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.8 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.8 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 at 100 mA at 1 V