Результаты поиска LTA
Найдено 1261 результатов.
- Samsung Electronics —
- Samsung Electronics —
- Maxim Integrated —
- Vishay Intertechnology — Vishay Intertechnology BS107KL-TA Mfr Package Description: TO-18, 3 PIN Package Shape: ROUND Package Style: CYLINDRICAL Terminal Form: THROUGH-HOLE Terminal Position: BOTTOM Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.8000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.3000 A DS Breakdown Voltage-Min: 240 V Drain-source On Resistance-Max: 4 ohm
- FCI — DISCRETE WIRE
- FCI — DISCRETE WIRE
- FCI — DISCRETE WIRE
- UTC [Unisonic Technologies] — 10A, 300V N-CHANNEL POWER MOSFET
- UTC [Unisonic Technologies] — 10 Amps, 500 Volts N-CHANNEL POWER MOSFET
- UTC [Unisonic Technologies] — 10A, 500V N-CHANNEL POWER MOSFET
