Результаты поиска SS36

Найдено 140 результатов.

• SS36-M3/9AT
  Vishay Semiconductor Diodes Division — DIODE SCHOTTKY 3A 60V DO-214AB
• SS36HE3_A/I
  Vishay Semiconductor Diodes Division — DIODE SCHOTTKY 60V 3A DO214AB
• EM6415VSS36A
  EM Microelectronic-Marin SA — Sensor Signal conditional Circuit with 14 bit A/D Converter
• EM6415VSS36B
  EM Microelectronic-Marin SA — Sensor Signal conditional Circuit with 14 bit A/D Converter
• 1SS366(FH)TB
  Sanyo Semiconductor — Sanyo Semiconductor 1SS366(FH)TB Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Technology: SCHOTTKY Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS Number of Elements: 2 Diode Element Material: SILICON Diode Type: SIGNAL DIODE Average Forward Current-Max: 0.0350 A
• SS32thruSS36
  General Semiconductor —
• 1SS362TE85LF
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 1SS362TE85LF Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Product: Switching Diodes Peak Reverse Voltage: 85 V Forward Continuous Current: 80 mA Max Surge Current: 1 A Configuration: Dual Recovery Time: 1.6 ns Forward Voltage Drop: 0.97 V Maximum Reverse Leakage Current: 0.5 uA Maximum Power Dissipation: 100 mW Operating Temperature Range: - 55 C to + 125 C Mounting Style: SMD/SMT Package / Case: SOT-416-3 Brand: Toshiba Maximum Diode Capacitance: 4 pF Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Factory Pack Quantity: 3000 Switch Configuration: Single
• 1SS362FV,L3F
  Toshiba Semiconductor and Storage — DIODE ARRAY GP 80V 100MA VESM
• 1SS361,LJ(CT
  Toshiba Semiconductor and Storage — DIODE ARRAY GP 80V 100MA SSM
• EM6415V1SS36A
  EM Microelectronic-Marin SA — Sensor Signal conditional Circuit with 14 bit A/D Converter