Результаты поиска BSS84

Найдено 153 результатов.

• BSS84AKW,115
  NXP Semiconductors — NXP Semiconductors BSS84AKW,115 Lead-Free Status: Lead Free Polarity: P-Channel Alternative: PHILIPS BSS84AKW,115,NXP BSS84AKW,115,PHIL BSS84AKW,115,PHILLIPS BSS84AKW,115,PHI BSS84AKW,115,PHILIP BSS84AKW,115,PHILIPS/NXP BSS84AKW,115,PHILIPS SEMICONDUCTORS BSS84AKW,115,Philips Semiconductor BSS84AKW,115,PHILIPS SEMI BSS84AKW,115,PHILPS BSS84AKW,115,PHILIPS COMPONENTS BSS84AKW,115,NXP SEMI BSS84AKW,115,PHL BSS84AKW,115,NXP/PHILIPS BSS84AKW,115,PHY BSS84AKW,115,PHILIPS ECG BSS84AKW,115,PHLIPS BSS84AKW,115,ERO BSS84AKW,115,PHILL BSS84AKW,115,PHYC BSS84AKW,115,PHILLIP BSS84AKW,115,PHIL/SIG BSS84AKW,115,PHILI BSS84AKW,115,RFT BSS84AKW,115,Philips Semiconductors BSS84AKW,115 RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 50 V Continuous Drain Current: - 150 mA Resistance Drain-Source RDS (on): 7.5 Ohms Mounting Style: SMD/SMT Package / Case: SOT-323 Forward Transconductance gFS (Max / Min): 150 mS Gate Charge Qg: 0.35 nC Power Dissipation: 260 mW Factory Pack Quantity: 3000
• BSS84AKV,115
  NXP Semiconductors — NXP Semiconductors BSS84AKV,115 Continuous Drain Current: - 170 mA Drain-source Breakdown Voltage: - 50 V Factory Pack Quantity: 4000 Forward Transconductance Gfs (max / Min): 150 mS Gate Charge Qg: 0.35 nC Mounting Style: SMD/SMT Package / Case: SOT-666 Power Dissipation: 330 mW Resistance Drain-source Rds (on): 7.5 Ohms Rohs: yes Transistor Polarity: P-Channel RoHS: yes Drain-Source Breakdown Voltage: - 50 V Resistance Drain-Source RDS (on): 7.5 Ohms Forward Transconductance gFS (Max / Min): 150 mS
• BSS84AKV,115
  NXP Semiconductors — NXP Semiconductors BSS84AKV,115 Continuous Drain Current: - 170 mA Drain-source Breakdown Voltage: - 50 V Factory Pack Quantity: 4000 Forward Transconductance Gfs (max / Min): 150 mS Gate Charge Qg: 0.35 nC Mounting Style: SMD/SMT Package / Case: SOT-666 Power Dissipation: 330 mW Resistance Drain-source Rds (on): 7.5 Ohms Rohs: yes Transistor Polarity: P-Channel RoHS: yes Drain-Source Breakdown Voltage: - 50 V Resistance Drain-Source RDS (on): 7.5 Ohms Forward Transconductance gFS (Max / Min): 150 mS
• BSS84AKT,115
  NXP Semiconductors — Philips Semiconductors BSS84AKT,115 Comm_code: 85412900 Eccn: EAR99 Lead_time: 56 Pack_quantity: 3000 Quantity: 9000
• BSS84AKS,115
  NXP Semiconductors — NXP Semiconductors BSS84AKS,115 Continuous Drain Current: - 160 mA Drain-source Breakdown Voltage: - 50 V Factory Pack Quantity: 3000 Forward Transconductance Gfs (max / Min): 150 mS Gate Charge Qg: 0.35 nC Mounting Style: SMD/SMT Package / Case: SOT-363 Power Dissipation: 280 mW Resistance Drain-source Rds (on): 7.5 Ohms Rohs: yes Transistor Polarity: P-Channel RoHS: yes Drain-Source Breakdown Voltage: - 50 V Resistance Drain-Source RDS (on): 7.5 Ohms Forward Transconductance gFS (Max / Min): 150 mS
• BSS84AKS,115
  NXP Semiconductors — NXP Semiconductors BSS84AKS,115 Continuous Drain Current: - 160 mA Drain-source Breakdown Voltage: - 50 V Factory Pack Quantity: 3000 Forward Transconductance Gfs (max / Min): 150 mS Gate Charge Qg: 0.35 nC Mounting Style: SMD/SMT Package / Case: SOT-363 Power Dissipation: 280 mW Resistance Drain-source Rds (on): 7.5 Ohms Rohs: yes Transistor Polarity: P-Channel RoHS: yes Drain-Source Breakdown Voltage: - 50 V Resistance Drain-Source RDS (on): 7.5 Ohms Forward Transconductance gFS (Max / Min): 150 mS
• BSS84AKM,315
  NXP Semiconductors — NXP Semiconductors BSS84AKM,315 RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 50 V Continuous Drain Current: - 230 mA Resistance Drain-Source RDS (on): 7.5 Ohms Mounting Style: SMD/SMT Package / Case: SOT-883 Forward Transconductance gFS (Max / Min): 150 mS Gate Charge Qg: 0.35 nC Power Dissipation: 340 mW Factory Pack Quantity: 10000
• BSS84-TAPE-7
  NXP Semiconductors — NXP Semiconductors BSS84-TAPE-7 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2500 W Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1300 A Feedback Cap-Max (Crss): 12 pF DS Breakdown Voltage-Min: 50 V Drain-source On Resistance-Max: 10 ohm
• BSS84PWH6327
  Infineon Technologies — Infineon Technologies BSS84PWH6327 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3000 W Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1500 A Feedback Cap-Max (Crss): 3.8 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 8 ohm
• BSS84P H6327
  Infineon Technologies — Infineon Technologies BSS84P H6327 Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: - 0.17 A Resistance Drain-Source RDS (on): 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Fall Time: 20.5 ns Forward Transconductance gFS (Max / Min): 0.13 S Gate Charge Qg: 1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.36 W Rise Time: 16.2 ns Typical Turn-Off Delay Time: 8.6 ns Part # Aliases: BSS84PH6327XTSA1 BSS84PH6327XTSA2 SP000702496