Результаты поиска SP-29

Найдено 202 результатов.

• BSP299L6327
  Infineon Technologies — Infineon Technologies BSP299L6327 Continuous Drain Current Id: 400mA Drain Source Voltage Vds: 500V On Resistance Rds(on): 4ohm Operating Temperature: RoHS Compliant Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Threshold Voltage Vgs Typ: 3V Transistor Polarity: N Channel Voltage Vgs Max: 20V
• BSP299H6327
  Infineon Technologies — Infineon Technologies BSP299H6327 Mfr Package Description: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.8 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 0.4000 A DS Breakdown Voltage-Min: 500 V Avalanche Energy Rating (Eas): 130 mJ Drain-source On Resistance-Max: 4 ohm Pulsed Drain Current-Max (IDM): 1.6 A
• BSP298E6327
  Infineon Technologies —
• BSP297L6327
  Infineon Technologies — Infineon Technologies BSP297L6327 Continuous Drain Current Id: 600mA Drain Source Voltage Vds: 200V On Resistance Rds(on): 2ohm Operating Temperature: RoHS Compliant Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Threshold Voltage Vgs Typ: 1.4V Transistor Polarity: N Channel Voltage Vgs Max: 20V
• BSP297E6433
  Infineon Technologies —
• BSP297H6327
  Infineon Technologies — Infineon Technologies BSP297H6327 Mfr Package Description: GREEN, SOT-223, 4 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.8 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 0.6600 A DS Breakdown Voltage-Min: 200 V Drain-source On Resistance-Max: 1.8 ohm Pulsed Drain Current-Max (IDM): 2.64 A
• BSP297E6327
  Infineon Technologies —
• BSP296L6433
  Infineon Technologies — Infineon Technologies BSP296L6433 Mfr Package Description: GREEN, PLASTIC PACKAGE-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.79 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 1.1 A DS Breakdown Voltage-Min: 100 V Drain-source On Resistance-Max: 0.7000 ohm Pulsed Drain Current-Max (IDM): 4.4 A
• BSP296L6327
  Infineon Technologies — Infineon Technologies BSP296L6327 Continuous Drain Current Id: 1A Drain Source Voltage Vds: 100V On Resistance Rds(on): 800mohm Operating Temperature: RoHS Compliant Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Threshold Voltage Vgs Typ: 1.4V Transistor Polarity: N Channel Voltage Vgs Max: 20V
• BSP296E6433
  Infineon Technologies —