Результаты поиска BSS84

Найдено 153 результатов.

• BSS84ZG-AE2-R
  UTC [Unisonic Technologies] — 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• BSS84ZL-AE2-R
  UTC [Unisonic Technologies] — 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• BSS84P L6433
  Infineon Technologies —
• BSS84P L6327
  Infineon Technologies —
• BSS84P L6327
  Infineon Technologies —
• BSS84P L6327
  Infineon Technologies —
• BSS84P E6433
  Infineon Technologies —
• BSS84P H6327
  Infineon Technologies — Infineon Technologies BSS84P H6327 Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: - 0.17 A Resistance Drain-Source RDS (on): 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Fall Time: 20.5 ns Forward Transconductance gFS (Max / Min): 0.13 S Gate Charge Qg: 1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.36 W Rise Time: 16.2 ns Typical Turn-Off Delay Time: 8.6 ns Part # Aliases: BSS84PH6327XTSA1 BSS84PH6327XTSA2 SP000702496
• BSS8402DW_08
  Diodes —
• BSS8402DW-13
  Diodes — Diodes BSS8402DW-13 Mfr Package Description: PLASTC PACKAGE-6 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN LEAD Terminal Position: DUAL Number of Terminals: 6 Package Body Material: PLASTIC/EPOXY Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL AND P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.1150 A Feedback Cap-Max (Crss): 5 pF DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 7.5 ohm