Результаты поиска BSS138

Найдено 129 результатов.

• BSS138N E8004
  Infineon Technologies —
• BSS138W E6433
  Infineon Technologies —
• BSS138W E6327
  Infineon Technologies —
• BSS138W E6327
  Infineon Technologies —
• BSS138W E6327
  Infineon Technologies —
• BSS138BKW,115
  Philips Semiconductors — Philips Semiconductors BSS138BKW,115 Comm_code: 85412100 Eccn: EAR99 Lead_time: 28 Pack_quantity: 3000 Quantity: 18000
• BSS138BKW,115
  NXP Semiconductors — Philips Semiconductors BSS138BKW,115 Comm_code: 85412100 Eccn: EAR99 Lead_time: 28 Pack_quantity: 3000 Quantity: 18000
• BSS138BKS,115
  NXP Semiconductors — NXP Semiconductors BSS138BKS,115 Configuration: Dual Continuous Drain Current: 0.32 A Drain-source Breakdown Voltage: 60 V Factory Pack Quantity: 3000 Fall Time: 20 ns Forward Transconductance Gfs (max / Min): 0.7 S Gate Charge Qg: 0.7 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT363-6 Power Dissipation: 0.28 W Resistance Drain-source Rds (on): 1.6 Ohms Rise Time: 5 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 38 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.6 Ohms Forward Transconductance gFS (Max / Min): 0.7 S Typical Turn-Off Delay Time: 38 ns
• BSS138BKS,115
  NXP Semiconductors — NXP Semiconductors BSS138BKS,115 Configuration: Dual Continuous Drain Current: 0.32 A Drain-source Breakdown Voltage: 60 V Factory Pack Quantity: 3000 Fall Time: 20 ns Forward Transconductance Gfs (max / Min): 0.7 S Gate Charge Qg: 0.7 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT363-6 Power Dissipation: 0.28 W Resistance Drain-source Rds (on): 1.6 Ohms Rise Time: 5 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 38 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.6 Ohms Forward Transconductance gFS (Max / Min): 0.7 S Typical Turn-Off Delay Time: 38 ns
• BSS138N H6327
  Infineon Technologies — Infineon Technologies BSS138N H6327 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.23 A Rds On: 3.5 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Fall Time: 8.2 ns Forward Transconductance - Min: 0.2 S Gate Charge Qg: 1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.36 W Rise Time: 3 ns Series: BSS138 Typical Turn-Off Delay Time: 6.7 ns Part # Aliases: BSS138NH6327XTSA2 SP000919330