Результаты поиска MMBT3906

Найдено 210 результатов.

• MMBT3906-AL3-R
  UTC [Unisonic Technologies] — GENERAL PURPOSE APPLIATION
• MMBT3906SL_12
  FAIRCHILD [Fairchild Semiconductor] — PNP Epitaxial Silicon Transistor
• SMMBT3906LT3G
  ON Semiconductor — ON Semiconductor SMMBT3906LT3G Collector- Base Voltage Vcbo: 40 V Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V Dc Current Gain Hfe Max: 60 at 0.1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 250 MHz Maximum Dc Collector Current: 0.2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V DC Current Gain hFE Max: 60 at 0.1 mA at 1 V
• SMMBT3906LT1G
  ON Semiconductor — ON Semiconductor SMMBT3906LT1G Collector- Base Voltage Vcbo: 40 V Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V Dc Current Gain Hfe Max: 60 at 0.1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 250 MHz Maximum Dc Collector Current: 0.2 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V DC Current Gain hFE Max: 60 at 0.1 mA at 1 V
• MMBT3906LP-7B
  Diodes — Diodes MMBT3906LP-7B Lead Free Status / Rohs Status: Lead free / RoHS Compliant Series: * RoHS: yes Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: - 40 V Emitter- Base Voltage VEBO: - 5 V DC Collector/Base Gain hfe Min: 100 at - 10 mA, - 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: X1-DFN1006-3 Continuous Collector Current: - 200 mA Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 55 C Other Names: MMBT3906LP-7BDITR
• MMBT3906LP-7B
  Diodes — Diodes MMBT3906LP-7B Lead Free Status / Rohs Status: Lead free / RoHS Compliant Series: * RoHS: yes Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: - 40 V Emitter- Base Voltage VEBO: - 5 V DC Collector/Base Gain hfe Min: 100 at - 10 mA, - 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: X1-DFN1006-3 Continuous Collector Current: - 200 mA Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 55 C Other Names: MMBT3906LP-7BDITR
• MMBT3906-GS08
  Vishay Intertechnology —
• MMBT3906FA-7B
  Diodes Incorporated — TRANS PNP 40V 0.2A X2-DFN0806-3
• MMBT3906FZ-7B
  Diodes Incorporated — TRANS PNP 40V 0.2A X2-DFN060
• MMBT3906HLT1G
  ON Semiconductor — TRANS PNP 40V 0.2A SOT23