Результаты поиска MMBT3904

Найдено 188 результатов.

• MMBT3904,215
  NXP Semiconductors — TRANS NPN 40V 0.2A SOT23
• SMMBT3904WT1G
  ON Semiconductor — ON Semiconductor SMMBT3904WT1G Polarity: NPN Power Dissipation-Tot: 150 mW CE Voltage-Max: 40 V Collector Current @ 100C: 200 mA
• SMMBT3904TT1G
  ON Semiconductor — ON Semiconductor SMMBT3904TT1G Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 40 V Collector-emitter Saturation Voltage: 0.3 V Configuration: Single Continuous Collector Current: 200 mA Dc Current Gain Hfe Max: 300 Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 300 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-416 Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.3 V Gain Bandwidth Product fT: 300 MHz DC Current Gain hFE Max: 300
• SMMBT3904LT1G
  ON Semiconductor — ON Semiconductor SMMBT3904LT1G Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.3 V Maximum DC Collector Current: 900 mA Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 30 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Continuous Collector Current: 200 mA DC Current Gain hFE Max: 300 Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C
• MMBT3904LT1XT
  Infineon Technologies — Infineon Technologies MMBT3904LT1XT Collector Current (dc) (max): 200mA Collector-base Voltage(max): 60V Collector-emitter Voltage: 40V Emitter-base Voltage (max): 6V Frequency (max): 300MHz Mounting: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package Type: SOT-23 Pin Count: 3 Power Dissipation: 330mW Transistor Polarity: NPN
• MMBT3904-L99Z
  Fairchild Semiconductor —
• MMBT3904Q-7-F
  Diodes — Diodes MMBT3904Q-7-F Polarity: NPN Power Dissipation-Tot: 300 mW CE Voltage-Max: 40 V Collector Current @ 100C: 200 mA
• MMBT3904LP-7B
  Diodes — Diodes MMBT3904LP-7B RoHS: yes Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V DC Collector/Base Gain hfe Min: 100 at 10 mA, 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: X1-DFN1006-3 Continuous Collector Current: 200 mA Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 55 C
• MMBT3904FA-7B
  Diodes — Diodes MMBT3904FA-7B RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.3 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 300 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: X2-DFN0806-3 Continuous Collector Current: 0.2 A DC Collector/Base Gain hfe Min: 30 at 100 mA at 1 V DC Current Gain hFE Max: 300 at 10 mA at 1 V Maximum Power Dissipation: 435 mW Minimum Operating Temperature: - 55 C
• MMBT3904FZ-7B
  Diodes Incorporated — TRANS NPN 40V 0.2A X2-DFN060