Результаты поиска MMBT2222A

Найдено 217 результатов.

• SMMBT2222AWT1G
  ON Semiconductor —
• SMMBT2222ALT3G
  ON Semiconductor — ON Semiconductor SMMBT2222ALT3G Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 75 VDC Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 1100 mA Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 40 Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 Continuous Collector Current: 600 mA Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C
• SMMBT2222ALT1G
  ON Semiconductor — ON Semiconductor SMMBT2222ALT1G Collector- Base Voltage Vcbo: 75 V Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V, 50 at 1 mA at 10 V, 75 at 10 mA at 10 V, 100 at 150 mA at 10 V, 50 at 150 mA at 1 V, 40 at 500 mA at 10 V Dc Current Gain Hfe Max: 35 at 0.1 mA at 10 V Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 300 MHz Maximum Dc Collector Current: 0.6 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 75 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 35 at 0.1 mA at 10 V, 50 at 1 mA at 10 V, 75 at 10 mA at 10 V, 100 at 150 mA at 10 V, 50 at 150 mA at 1 V, 40 at 500 mA at 10 V DC Current Gain hFE Max: 35 at 0.1 mA at 10 V
• MMBT2222ALT1XT
  Infineon Technologies — Infineon Technologies MMBT2222ALT1XT Collector Current (dc) (max): 600mA Collector-base Voltage: 75V Collector-emitter Voltage: 40V Emitter-base Voltage: 6V Frequency (max): 300MHz Lead Free Status / Rohs Status: Compliant Mounting: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package Type: SOT-23 Pin Count: 3 Power Dissipation: 330mW Transistor Polarity: NPN
• MMBT2222A_D99Z
  Fairchild Semiconductor —
• MMBT2222A-GS08
  Vishay Intertechnology —
• MMBT2222AHLT1G
  ON Semiconductor — TRANS NPN 40V 0.6A SOT23
• MMBT2222AHLT1H
  ON Semiconductor — TRANS NPN 40V 0.6A SOT23
• MMBT2222ADW1T1
  WILLAS [WILLAS ELECTRONIC CORP] — Dual General Purpose Transistors
• MMBT2222AG-AE3-R
  UTC [Unisonic Technologies] — NPN GENERAL PURPOSE AMPLIFIER