Результаты поиска TPC8A01(TE12L,Q)
Найдено 1 результатов.
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TPC8A01(TE12L,Q) Configuration: Dual Dual Drain Continuous Drain Current: 6 A @Q1 Current - Continuous Drain (id) @ 25?° C: 6A, 8.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: 2 N-Channel (Dual) Gate Charge (qg) @ Vgs: 17nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 940pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 750mW Power Dissipation: 1.5 W Rds On (max) @ Id, Vgs: 25 mOhm @ 3A, 10V Resistance Drain-source Rds (on): 0.025 Ohm @10V @Q1 Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.3V @ 1mA Other Names: TPC8A01(TE12L,Q), TPC8A01QTR