Результаты поиска TLP290-4(GB-TP,E)

Найдено 3 результатов.

• TLP290-4(GB-TP,E)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP290-4(GB-TP,E) RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.4 V Isolation Voltage: 2500 Vrms Maximum Power Dissipation: 100 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SO-16 Forward Current: 50 mA Number of Channels per Chip: 4 Channels Output Device: NPN Phototransistor
• TLP290-4(GB-TP,E)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP290-4(GB-TP,E) RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.4 V Isolation Voltage: 2500 Vrms Maximum Power Dissipation: 100 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SO-16 Forward Current: 50 mA Number of Channels per Chip: 4 Channels Output Device: NPN Phototransistor
• TLP290-4(GB-TP,E)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP290-4(GB-TP,E) RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.4 V Isolation Voltage: 2500 Vrms Maximum Power Dissipation: 100 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SO-16 Forward Current: 50 mA Number of Channels per Chip: 4 Channels Output Device: NPN Phototransistor