Результаты поиска TLP185(E)
Найдено 20 результатов.
- TOSHIBA Semiconductor —
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(E) Product Category: Opto - Photocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 3750 Vrms Maximum Forward Diode Voltage: 1.4 V Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Brand: Toshiba Forward Current: 16 mA Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 125
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(SE RoHS: yes
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(GB,E) Product Category: Opto - Photocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 3750 Vrms Maximum Forward Diode Voltage: 1.4 V Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Brand: Toshiba Forward Current: 16 mA Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 125
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(GR,E) Product Category: Opto - Photocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 400 % Maximum Forward Diode Voltage: 1.4 V Maximum Input Diode Current: 50 mA Maximum Collector Current: 50 mA Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SO-6 Brand: Toshiba Forward Current: 16 mA Maximum Fall Time: 9 us Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 5 us Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 125
- TOSHIBA Semiconductor —
- TOSHIBA Semiconductor —
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(TPL,SE Product Category: Transistor Output Optocouplers RoHS: yes Input Type: DC Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 50 % to 600 % Maximum Forward Diode Voltage: 1.4 V Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Package / Case: SOP-4 Brand: Toshiba Forward Current: 50 mA Maximum Fall Time: 3 us Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 2 us Number of Channels per Chip: 1 Channel Output Device: Phototransistor Factory Pack Quantity: 125
- Toshiba Semiconductor and Storage — OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- TOSHIBA Semiconductor — TOSHIBA Semiconductor TLP185(GB-TPR,E) Product Category: Opto - Photocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.3 V Isolation Voltage: 3750 Vrms Maximum Forward Diode Voltage: 1.4 V Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 110 C Minimum Operating Temperature: - 55 C Brand: Toshiba Forward Current: 16 mA Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 3000