Результаты поиска STP13NM60N

Найдено 2 результатов.

• STP13NM60N
  STMicroelectronics — MOSFET N-CH 600V 11A TO-220
• STP13NM60ND
  STMicroelectronics — STMicroelectronics STP13NM60ND RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Resistance Drain-Source RDS (on): 0.38 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC Minimum Operating Temperature: - 55 C Power Dissipation: 109 W Rise Time: 10 ns Typical Turn-Off Delay Time: 9.6 ns