Результаты поиска SN7002N H6327

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• SN7002N H6327
  Infineon Technologies — Infineon Technologies SN7002N H6327 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.2 A Resistance Drain-Source RDS (on): 5 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PG-SOT23-3 Fall Time: 3.6 ns Forward Transconductance gFS (Max / Min): 0.17 S Gate Charge Qg: 1 nC Minimum Operating Temperature: - 55 C Power Dissipation: 0.36 W Rise Time: 3.2 ns Typical Turn-Off Delay Time: 5.3 ns Part # Aliases: SN7002NH6327XTSA1 SN7002NH6327XTSA2 SP000702638