Результаты поиска SI6913DQ-T1-GE3

Найдено 2 результатов.

• SI6913DQT1GE3
  Vishay Semiconductors — Vishay Semiconductors SI6913DQT1GE3 Quantity: 3000
• SI6913DQ-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI6913DQ-T1-GE3 Continuous Drain Current Id: -4.4A Current - Continuous Drain (id) @ 25?° C: 4.9A Drain Source Voltage Vds: -12V Drain To Source Voltage (vdss): 12V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Gate Charge (qg) @ Vgs: 28nC @ 4.5V ID_COMPONENTS: 2661607 Module Configuration: Dual Mounting Type: Surface Mount On Resistance Rds(on): 30.7mohm Package / Case: 8-TSSOP (0.173", 4.40mm Width) Power - Max: 830mW Rds On (max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V Rds(on) Test Voltage Vgs: 1.8V Series: TrenchFET?® Transistor Polarity: P Channel Vgs(th) (max) @ Id: 900mV @ 400?µA Other Names: SI6913DQ-T1-GE3TR