Результаты поиска SI5935CDC-T1-GE3
Найдено 1 результатов.
- Vishay Intertechnology — Vishay Intertechnology SI5935CDC-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 3.1 A Resistance Drain-Source RDS (on): 100 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: 1206-8 ChipFET Minimum Operating Temperature: - 55 C Power Dissipation: 1.3 W Part # Aliases: SI5935CDC-GE3