Результаты поиска SI4850EY-T1-GE3
Найдено 1 результатов.
- Vishay Intertechnology — Vishay Intertechnology SI4850EY-T1-GE3 Continuous Drain Current Id: 6A Current - Continuous Drain (id) @ 25?° C: 6A Drain Source Voltage Vds: 60V Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 27nC @ 10V ID_COMPONENTS: 2662172 Mounting Type: Surface Mount On Resistance Rds(on): 18mohm Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 1.7W Power Dissipation Pd: 1.7W Rds On (max) @ Id, Vgs: 22 mOhm @ 6A, 10V Rds(on) Test Voltage Vgs: 10V Series: TrenchFET?® Threshold Voltage Vgs Typ: 3V Transistor Polarity: N Channel Vgs(th) (max) @ Id: 3V @ 250?µA Other Names: SI4850EY-T1-GE3TR