Результаты поиска SI4840BDY-T1-GE3

Найдено 2 результатов.

• SI4840BDY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4840BDY-T1-GE3 Configuration: Single Continuous Drain Current: 5 A Drain-source Breakdown Voltage: 40 V Forward Transconductance Gfs (max / Min): 56 S Gate Charge Qg: 50 nC ID_COMPONENTS: 1950860 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SO-8 Power Dissipation: 6 W Resistance Drain-source Rds (on): 0.0095 Ohms Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 9 mOhms Fall Time: 10 ns Forward Transconductance gFS (Max / Min): 56 S Rise Time: 12 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 25 ns Part # Aliases: SI4840BDY-GE3
• SI4840BDY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4840BDY-T1-GE3 Configuration: Single Continuous Drain Current: 5 A Drain-source Breakdown Voltage: 40 V Forward Transconductance Gfs (max / Min): 56 S Gate Charge Qg: 50 nC ID_COMPONENTS: 1950860 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SO-8 Power Dissipation: 6 W Resistance Drain-source Rds (on): 0.0095 Ohms Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 9 mOhms Fall Time: 10 ns Forward Transconductance gFS (Max / Min): 56 S Rise Time: 12 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 25 ns Part # Aliases: SI4840BDY-GE3