Результаты поиска SI4830CDY-T1-GE3

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• SI4830CDY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4830CDY-T1-GE3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 5.7 A Resistance Drain-Source RDS (on): 20 mOhms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SO-8 Forward Transconductance gFS (Max / Min): 29 S Gate Charge Qg: 16.5 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2 W Part # Aliases: SI4830CDY-GE3