Результаты поиска SI4825DDY-T1-GE3

Найдено 2 результатов.

• SI4825DDY-T1-GE3
  Siliconix — Vishay Intertechnology SI4825DDY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 10.9 A Drain Source Voltage Vds: -30V Drain-source Breakdown Voltage: 30 V Gate-source Breakdown Voltage: +/- 25 V ID_COMPONENTS: 2663054 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 0.01ohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: SOIC-8 Narrow Power Dissipation: 2700 mW Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V Rohs Compliant: Yes Transistor Case Style: SOIC Transistor Polarity: P-Channel Voltage Vgs Max: -25V
• SI4825DDY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4825DDY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 10.9 A Drain Source Voltage Vds: -30V Drain-source Breakdown Voltage: 30 V Gate-source Breakdown Voltage: +/- 25 V ID_COMPONENTS: 2663054 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 0.01ohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: SOIC-8 Narrow Power Dissipation: 2700 mW Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V Rohs Compliant: Yes Transistor Case Style: SOIC Transistor Polarity: P-Channel Voltage Vgs Max: -25V