Результаты поиска SI4599DY-T1-GE3

Найдено 2 результатов.

• SI4599DY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4599DY-T1-GE3 Configuration: Dual Dual Drain Continuous Drain Current: 5.6 A, - 4.7 A Current - Continuous Drain (id) @ 25В° C: 6.8A, 5.8A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Gate Charge (qg) @ Vgs: 20nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1715469 Input Capacitance (ciss) @ Vds: 640pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Type: Surface Mount On Resistance Rds(on): 29.5mohm Operating Temperature Range: -55°C To +150°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 3W, 3.1W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms Rohs Compliant: Yes Series: TrenchFETВ® Transistor: RoHS Compliant Transistor Case Style: SOIC Transistor Polarity: N And P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Voltage Vgs Max: 20V Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0355 Ohms, 0.045 Ohms Fall Time: 10 ns, 13 ns Rise Time: 17 ns, 33 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 16 ns, 30 ns Part # Aliases: SI4599DY-GE3 Other Names: SI4599DY-T1-GE3TR
• SI4599DY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4599DY-T1-GE3 Configuration: Dual Dual Drain Continuous Drain Current: 5.6 A, - 4.7 A Current - Continuous Drain (id) @ 25В° C: 6.8A, 5.8A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: N and P-Channel Gate Charge (qg) @ Vgs: 20nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1715469 Input Capacitance (ciss) @ Vds: 640pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Type: Surface Mount On Resistance Rds(on): 29.5mohm Operating Temperature Range: -55°C To +150°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 3W, 3.1W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms Rohs Compliant: Yes Series: TrenchFETВ® Transistor: RoHS Compliant Transistor Case Style: SOIC Transistor Polarity: N And P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Voltage Vgs Max: 20V Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0355 Ohms, 0.045 Ohms Fall Time: 10 ns, 13 ns Rise Time: 17 ns, 33 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 16 ns, 30 ns Part # Aliases: SI4599DY-GE3 Other Names: SI4599DY-T1-GE3TR