Результаты поиска SI4485DY-T1-GE3
Найдено 1 результатов.
- Siliconix — Siliconix SI4485DY-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: - 6 A Resistance Drain-Source RDS (on): 0.035 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SO-8 Gate Charge Qg: 13.6 nC Minimum Operating Temperature: - 55 C Power Dissipation: 5 W Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 16 ns, 18 ns Part # Aliases: SI4485DY-GE3