Результаты поиска SI4166DY-T1-GE3

Найдено 2 результатов.

• SI4166DY-T1-GE3
  Siliconix — Vishay Intertechnology SI4166DY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 20.5 A Drain-source Breakdown Voltage: 30 V Forward Transconductance Gfs (max / Min): 65 S Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950589 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 3000 mW Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V Transistor Polarity: N-Channel
• SI4166DY-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI4166DY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 20.5 A Drain-source Breakdown Voltage: 30 V Forward Transconductance Gfs (max / Min): 65 S Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950589 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 3000 mW Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V Transistor Polarity: N-Channel