Результаты поиска SI4116DY-T1-E3

Найдено 2 результатов.

• SI4116DY-T1-E3
  Siliconix — Siliconix SI4116DY-T1-E3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 12.7 A Drain-source Breakdown Voltage: 25 V Gate-source Breakdown Voltage: +/- 12 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 2.5 W Resistance Drain-source Rds (on): 0.0086 Ohms Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: +/- 12 V Resistance Drain-Source RDS (on): 8.6 mOhms Fall Time: 15 ns Rise Time: 11 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 50 ns Part # Aliases: SI4116DY-E3
• SI4116DY-T1-E3
  Siliconix — Siliconix SI4116DY-T1-E3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 12.7 A Drain-source Breakdown Voltage: 25 V Gate-source Breakdown Voltage: +/- 12 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 2.5 W Resistance Drain-source Rds (on): 0.0086 Ohms Transistor Polarity: N-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: +/- 12 V Resistance Drain-Source RDS (on): 8.6 mOhms Fall Time: 15 ns Rise Time: 11 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 50 ns Part # Aliases: SI4116DY-E3