Результаты поиска SI3932DV-T1-GE3

Найдено 2 результатов.

• SI3932DV-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI3932DV-T1-GE3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 3.7 A Resistance Drain-Source RDS (on): 0.047 Ohms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP-6 Forward Transconductance gFS (Max / Min): 10 S Gate Charge Qg: 3.7 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1.4 W Part # Aliases: SI3932DV-GE3
• SI3932DV-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI3932DV-T1-GE3 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 3.7 A Resistance Drain-Source RDS (on): 0.047 Ohms Configuration: Dual Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP-6 Forward Transconductance gFS (Max / Min): 10 S Gate Charge Qg: 3.7 nC Minimum Operating Temperature: - 55 C Power Dissipation: 1.4 W Part # Aliases: SI3932DV-GE3