Результаты поиска SI3459BDV-T1-GE3

Найдено 2 результатов.

• SI3459BDV-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI3459BDV-T1-GE3 Continuous Drain Current: - 2.9 A Continuous Drain Current Id: -2.2A Current - Continuous Drain (id) @ 25В° C: 2.9A Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: - 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 4 S Gate Charge (qg) @ Vgs: 12nC @ 10V Gate Charge Qg: 4.4 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 2662461 Input Capacitance (ciss) @ Vds: 350pF @ 30V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 180mohm Package / Case: 6-TSOP (0.063", 1.60mm Width) Power - Max: 3.3W Power Dissipation: 3.3 W Power Dissipation Pd: 2W Rds On (max) @ Id, Vgs: 216 mOhm @ 2.2A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.216 Ohms Series: TrenchFETВ® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.216 Ohms Configuration: Single Forward Transconductance gFS (Max / Min): 4 S Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 16 ns, 18 ns Part # Aliases: SI3459BDV-GE3 Other Names: SI3459BDV-T1-GE3TR
• SI3459BDV-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI3459BDV-T1-GE3 Continuous Drain Current: - 2.9 A Continuous Drain Current Id: -2.2A Current - Continuous Drain (id) @ 25В° C: 2.9A Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: - 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 4 S Gate Charge (qg) @ Vgs: 12nC @ 10V Gate Charge Qg: 4.4 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 2662461 Input Capacitance (ciss) @ Vds: 350pF @ 30V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 180mohm Package / Case: 6-TSOP (0.063", 1.60mm Width) Power - Max: 3.3W Power Dissipation: 3.3 W Power Dissipation Pd: 2W Rds On (max) @ Id, Vgs: 216 mOhm @ 2.2A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.216 Ohms Series: TrenchFETВ® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.216 Ohms Configuration: Single Forward Transconductance gFS (Max / Min): 4 S Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 16 ns, 18 ns Part # Aliases: SI3459BDV-GE3 Other Names: SI3459BDV-T1-GE3TR