Результаты поиска SI2309CDS-T1-GE3
Найдено 2 результатов.
- Vishay Intertechnology — Vishay Intertechnology SI2309CDS-T1-GE3 Configuration: Single Continuous Drain Current: 1.2 A Drain Source Voltage Vds: -60V Drain-source Breakdown Voltage: 60 V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1952426 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 285mohm Operating Temperature Range: -55°C To +150°C Package / Case: TO-236 Power Dissipation: 1000 mW Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.345 Ohm @ 10 V Rohs Compliant: Yes Transistor Case Style: SOT-23 Transistor Polarity: P-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.345 Ohms Fall Time: 35 ns Rise Time: 35 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 15 ns Part # Aliases: SI2309CDS-GE3
- Vishay Intertechnology — Vishay Intertechnology SI2309CDS-T1-GE3 Configuration: Single Continuous Drain Current: 1.2 A Drain Source Voltage Vds: -60V Drain-source Breakdown Voltage: 60 V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1952426 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT On Resistance Rds(on): 285mohm Operating Temperature Range: -55°C To +150°C Package / Case: TO-236 Power Dissipation: 1000 mW Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.345 Ohm @ 10 V Rohs Compliant: Yes Transistor Case Style: SOT-23 Transistor Polarity: P-Channel Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.345 Ohms Fall Time: 35 ns Rise Time: 35 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 15 ns Part # Aliases: SI2309CDS-GE3